By Bernard Dieny ,Ronald B. Goldfarb,Kyung-Jin Lee
ISBN-10: 111900974X
ISBN-13: 9781119009740
Magnetic random-access reminiscence (MRAM) is poised to interchange conventional machine reminiscence in accordance with complementary metal-oxide semiconductors (CMOS). MRAM will surpass all different varieties of reminiscence units by way of nonvolatility, low power dissipation, quickly switching pace, radiation hardness, and sturdiness. even though toggle-MRAM is at present a advertisement product, it's transparent that destiny advancements in MRAM should be according to spin-transfer torque, which uses electrons’ spin angular momentum rather than their cost. MRAM would require an amalgamation of magnetics and microelectronics applied sciences. notwithstanding, researchers and builders in magnetics and in microelectronics attend diverse technical meetings, submit in several journals, use assorted instruments, and feature diverse backgrounds in condensed-matter physics, electric engineering, and fabrics science.
This e-book is an advent to MRAM for microelectronics engineers written through experts in magnetic fabrics and units. It provides the elemental phenomena excited about MRAM, the fabrics and movie stacks getting used, the elemental ideas of a number of the forms of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic know-how, and up to date advancements towards logic-in-memory architectures. It is helping bridge the cultural hole among the microelectronics and magnetics communities.
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Introduction to Magnetic Random-Access Memory by Bernard Dieny ,Ronald B. Goldfarb,Kyung-Jin Lee
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